Nanotechnology is a groundbreaking field that delves into the manipulation and engineering of materials and devices at the nanoscale—often at the level of individual atoms and molecules. This interdisciplinary discipline merges insights from physics, chemistry, engineering, and materials science to create innovative solutions with unprecedented properties and applications.
Nanotechnologists investigate topics such as nanomaterials, nanoelectronics, and nanomedicine. By harnessing the unique behaviors of nanomaterials, they contribute to advancements in electronics, energy storage, medicine, and environmental sustainability. Nanotechnology plays a pivotal role in pushing the boundaries of what is possible in science, technology, and medicine.
Open Access Policy refers to a set of principles and guidelines aimed at providing unrestricted access to scholarly research and literature. It promotes the free availability and unrestricted use of research outputs, enabling researchers, students, and the general public to access, read, download, and distribute scholarly articles without financial or legal barriers. In this response, I will provide you with an overview of the history and latest resolutions related to Open Access Policy.
There is constructed a qualitative model of the electrical conductivity of semiconductors irradiated with sufficiently high-energy particles. At certain conditions (irradiation temperature and dose, and subsequent thermal treatment), high-energy particles fluence, in addition to primary and secondary point radiation defects, forms a number of nano-sized disordered regions, highly conductive (“metallic”) compared to the semiconductor matrix. Their high total volume fraction can lead to the charge major carriers’ effective Hall ...mobility significantly exceeding that of the matrix. Due to elastic stresses created by these disordered inclusions, a high concentration of point radiation defects tends to form defective shells. In certain temperature ranges, such nanosized core-shell structures act as capacitors storing the electric charge sufficient for the Coulomb blockade of the major current carriers. Transformation of high-conductive inclusions into low-conductive (“dielectric”) ones manifests in a noticeable decrease in effective Hall mobility. The proposed model qualitatively explains all the experimental data available on single-crystalline n- and p-type silicon irradiated with high-energy electrons and protons and isochronously annealed.
