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Abstract

Egamberdiev BE 著者 at IgMin Research

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Engineering Group (1)

Research Article Article ID: igmin206
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Open Access Policy refers to a set of principles and guidelines aimed at providing unrestricted access to scholarly research and literature. It promotes the free availability and unrestricted use of research outputs, enabling researchers, students, and the general public to access, read, download, and distribute scholarly articles without financial or legal barriers. In this response, I will provide you with an overview of the history and latest resolutions related to Open Access Policy.

On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon
by Egamberdiev BE, Daliev Kh S, Khamidjonov I Kh, Norkulov Sh B and Erugliev UK

The experimental team has developed a technology of step-by-step low-temperature diffusion doping of gadolinium and scandium into silicon that allows the clusters of impurity atoms to be uniformly distributed throughout the entire bulk of the silicon material. It was shown that, unlike the samples obtained under the high-temperature diffusion doping technology, in the samples obtained under the novel technology the team had detected any surface erosion or formation of alloys and silicide in the near-surface region. The authors have revealed inc...reased thermostability and radiation resistance of silicon samples dotted with clusters of impurity atoms of gadolinium and scandium.The authors have conducted comprehensive studies by using the techniques of tagged atoms, autoradiography, measurement of conductivity and Hall effect, isothermal relaxation of capacitance and current of diffusion, solubility, and electrophysical properties of scandium in silicon under various doping conditions and for a wide temperature range (1100 ÷ 1250 0С). Diffusion parameters, solubility and acceptor nature of scandium in silicon as well as thermal stability of silicon doped with gadolinium and scandium impurity atoms have been established.

Materials Science
Egamberdiev BE

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仕事内容

 National University -affiliated Research Institute of Semiconductor Physics and Microelectronics, Tashkent, 100057, Republic of Uzbekistan

 Uzbekistan

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