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Biology Group Review Article 記事ID: igmin166

Qualitative Model of Electrical Conductivity of Irradiated Semiconductor

Nanotechnology
Temur Pagava ,
Levan Chkhartishvili ,
Manana Beridze ,
Darejan Khocholava ,
Marina Shogiradze and
Ramaz Esiava
Affiliation

Affiliation

DOI10.61927/igmin166 全文HTML 全文PDF この記事を引用する
DOI10.61927/igmin166 全文HTML 全文PDF この記事を引用する

要約

There is constructed a qualitative model of the electrical conductivity of semiconductors irradiated with sufficiently high-energy particles. At certain conditions (irradiation temperature and dose, and subsequent thermal treatment), high-energy particles fluence, in addition to primary and secondary point radiation defects, forms a number of nano-sized disordered regions, highly conductive (“metallic”) compared to the semiconductor matrix. Their high total volume fraction can lead to the charge major carriers’ effective Hall mobility significantly exceeding that of the matrix. Due to elastic stresses created by these disordered inclusions, a high concentration of point radiation defects tends to form defective shells. In certain temperature ranges, such nanosized core-shell structures act as capacitors storing the electric charge sufficient for the Coulomb blockade of the major current carriers. Transformation of high-conductive inclusions into low-conductive (“dielectric”) ones manifests in a noticeable decrease in effective Hall mobility. The proposed model qualitatively explains all the experimental data available on single-crystalline n- and p-type silicon irradiated with high-energy electrons and protons and isochronously annealed.

数字

Temperature-dependence of electrons Hall concentration in n-type silicon single crystal before irradiation (1 – ♦), after irradiation (2 – ■) and annealing at temperatures of 110 (3 – ▲), 120 (4 – ×), 290 (5 – ж) and 380 °C (6 – ●). Figure 1: Temperature-dependence of electrons Hall concentra...
Temperature-dependence of electrons Hall mobility in n-type silicon single crystal before irradiation (1 – ♦), after irradiation (2 – ■) and annealing at temperatures of 110 (3 – ▲), 120 (4 – ×), 290 (5 – ж) and 380 °C (6 – ●). Figure 2: Temperature-dependence of electrons Hall mobility ...
Temperature-dependence of holes Hall concentration in p-type silicon single crystal before irradiation (1 – ♦), after irradiation (2 – ■) and annealing at temperatures of 80 (3 – ▲), 90 (4 – ×), 120 (5 – ж), 170 (6 – ●), 180 (7 – +), 360 (8 – –) and 500 °С (9 – ▬). Figure 3: Temperature-dependence of holes Hall concentration...
Temperature-dependence of holes Hall mobility in p-type silicon single crystal before irradiation (1 – ♦), after irradiation (2 – ■) and annealing at temperatures of 80 (3 – ▲), 90 (4 – ×), 120 (5 – ж), 170 (6 – ●), 180 (7 – +), 360 (8 – –) and 500 °С (9 – ▬). Figure 4: Temperature-dependence of holes Hall mobility in p...

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